A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures
نویسندگان
چکیده
This paper discusses the removal of the doped polysilicon of a gate transistor by KOH wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of a two-dimensional (2-D) doping profile of scanning capacitance microscopy (SCM), which more accurately provides the results of the desired device structures for inline monitoring, failure analysis, and also for product characterization.
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تاریخ انتشار 2006